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PX402 950T65 BAS16T L1923 LBN12403 OL5112L 39000 D81C90
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 JMnic
Product Specification
Silicon PNP Power Transistors
2SB1254
DESCRIPTION With TO-3PFa package Optimum for 60W HiFi output High foward current transfer ratio Low collector saturation voltage Complement to type 2SD1894 APPLICATIONS Power amplification
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature 3 150 -55~150 ae ae CONDITIONS Open emitter Open base Open collector VALUE -160 -140 -5 -7 -12 70 W UNIT V V V A A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-30mA ; IB=0 IC=-6A ;IB=-6mA IC=-6A ;IB=-6mA VCB=-160V; IE=0 VCE=-140V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-6A ; VCE=-5V IC=-0.5A ; VCE=-10V;f=1MHz 2000 5000 20 MIN -140 TYP.
2SB1254
SYMBOL VCEO VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE -2 fT
MAX
UNIT V
-2.5 -3.0 -100 -100 -100 |I |I |I
V V A A A
30000 MHz
Switching times ton ts tf Turn-on time Storage time Fall time IC=-6A; VCC=50V IB1=-IB2=-6mA 1.0 1.5 1.2 |I |I |I s s s
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1254
Fig.2 Outline dimensions (unindicated tolerance:A
0.30mm)
3


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